Sample Fabrication
Substrate
...
p-Si(111) p-Si 5e14, 50keV
Shots: 4a, 4b, 4c, 4d
All 4 shots were okay. All of them 2.5x2.5 mm each.
...
, ρ = 1000 Ω-cm
Implantation conditions
Au, 50 keV, 5e14 /cm2 dose
Pulsed laser melting
Spot | Spot size | Laser used | Shooting conditions | Result |
|---|---|---|---|---|
A | 2.5x2.5 mm2, masked | Harvard YAG, 355 nm | 1 shot @ 0.7 J/cm2 | good |
B | 2.5x2.5 mm2, masked | Harvard YAG, 355 nm | 1 shot @ 0.7 J/cm2 | good |
C | 2.5x2.5 mm2, masked | Harvard YAG, 355 nm | 1 shot @ 0.7 J/cm2 | good |
D | 2.5x2.5 mm2, masked | Harvard YAG, 355 nm | 1 shot @ 0.7 J/cm2 | good |
Measurements and Processing
Sample 4A
- 6/4/2012 UV-VIS reflection measurement
20120604 UV-VIS reflection Au 4a.Sample.Raw.csv
- 6/5/2012 UV-VIS transmission measurement
20120605 UV-VIS transmission Au 4a.Sample.Raw.csv
- 6/11/2012 Laser cut into 7x7 mm sample, solvent clean
Debris due to laser cut observed
On 6/13/2012, found out that this laser cutting procedure raises a normal silicon sample temperature high enough to hard-bake the photoresist, so it could have initiated gold diffusion on 4a.
Sample
...
4B
- 6/11/2012 Laser cut into 7x7 mm sample, solvent clean
Debris due to laser cut observed
On 6/13/2012, found out that this laser cutting procedure raises a normal silicon sample temperature high enough to hard-bake the photoresist, so it could have initiated gold diffusion on 4b.