Sample Fabrication

p-Si(111), ρ = 1000 Ω-cm

Au, 50 keV, 5e14 /cm2 dose

Spot	Spot size	Laser used	Shooting conditions	Result
A	2.5x2.5 mm2, masked	Harvard YAG, 355 nm	1 shot @ 0.7 J/cm2	good
B	2.5x2.5 mm2, masked	Harvard YAG, 355 nm	1 shot @ 0.7 J/cm2	good
C	2.5x2.5 mm2, masked	Harvard YAG, 355 nm	1 shot @ 0.7 J/cm2	good
D	2.5x2.5 mm2, masked	Harvard YAG, 355 nm	1 shot @ 0.7 J/cm2	good

Measurements and Processing

6/4/2012 UV-VIS reflection measurement
20120604 UV-VIS reflection Au 4a.Sample.Raw.csv
6/5/2012 UV-VIS transmission measurement
20120605 UV-VIS transmission Au 4a.Sample.Raw.csv
6/11/2012 Laser cut into 7x7 mm sample, solvent clean
Debris due to laser cut observed
On 6/13/2012, found out that this laser cutting procedure raises a normal silicon sample temperature high enough to hard-bake the photoresist, so it could have initiated gold diffusion on 4a.

6/11/2012 Laser cut into 7x7 mm sample, solvent clean
Debris due to laser cut observed
On 6/13/2012, found out that this laser cutting procedure raises a normal silicon sample temperature high enough to hard-bake the photoresist, so it could have initiated gold diffusion on 4b.