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Sample Fabrication

Substrate # Need update

n-Si(100), ρ = 1-10 Ω-cm

Implantation conditions

Au, 50 keV, 7e14 /cm2 dose

Pulsed laser melting # Need update

Spot

Spot size

Laser used

Shooting conditions

Result

A

2.5x2.5 mm2, masked

Harvard YAG, 355 nm

1 shot @ 0.7 J/cm2

good

B

2.5x2.5 mm2, masked

Harvard YAG, 355 nm

1 shot @ 0.7 J/cm2

dirty spot, bad TRR

C

2.5x2.5 mm2, masked

Harvard YAG, 355 nm

1 shot @ 0.7 J/cm2

good

D

2.5x2.5 mm2, masked

Harvard YAG, 355 nm

1 shot @ 0.7 J/cm2

good

E

2.5x2.5 mm2, masked

Harvard YAG, 355 nm

1 shot @ 0.7 J/cm2

good

Measurements and Processing

Sample 7C
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