Sample Fabrication

n-Si(100), ρ = 1-10 Ω-cm

Au, 50 keV, 1e14 /cm2 dose

Spot	Spot size	Laser used	Shooting conditions	Result
A	2.5x2.5 mm2, masked	Harvard YAG, 355 nm	1 shot @ 0.7 J/cm2
B	2.5x2.5 mm2, masked	Harvard YAG, 355 nm	1 shot @ 0.7 J/cm2
C	2.5x2.5 mm2, masked	Harvard YAG, 355 nm	1 shot @ 0.7 J/cm2
D	2.5x2.5 mm2, masked	Harvard YAG, 355 nm	1 shot @ 0.7 J/cm2	good
E	2.5x2.5 mm2, masked	Harvard YAG, 355 nm	1 shot @ 0.7 J/cm2	good

Measurements and processing

6/4/2012 UV-VIS reflection measurement
20120604 UV-VIS reflection Au 1a.Sample.Raw.csv
6/5/2012 UV-VIS transmission measurement
20120605 UV-VIS transmission Au 1a.Sample.Raw.csv
6/13/2012 Spin photoresist and bake at 115 C for 1 minute to protect sample from debris during laser cut
7/10/2012 Retook UV-VIS after tool lamp change
20120709 Au UV-VIS.xlsx

6/13/2012 Spin photoresist and bake at 115 C for 1 minute to protect sample from debris during laser cut

6/5/2012 Raman measurements
Sample 1D raman.xlsx
Raman measurements indicate that laser melted layer is single crystal. Main LO peak is located at about 530 cm-1, which would indicate compressive strain of about 1.5%.