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Sample Fabrication

Substrate

n-Si(100), ρ = 1-10 Ω-cm

Implantation conditions

Au, 50 keV, 5e14 /cm2 dose

Pulsed laser melting

Spot

Spot size

Laser used

Shooting conditions

Result

A

2.5x2.5 mm2, masked

Harvard YAG, 355 nm

1 shot @ 0.7 J/cm2

good

B

2.5x2.5 mm2, masked

Harvard YAG, 355 nm

1 shot @ 0.7 J/cm2

dirty spot, bad TRR

C

2.5x2.5 mm2, masked

Harvard YAG, 355 nm

1 shot @ 0.7 J/cm2

good

D

2.5x2.5 mm2, masked

Harvard YAG, 355 nm

1 shot @ 0.7 J/cm2

good

E

2.5x2.5 mm2, masked

Harvard YAG, 355 nm

1 shot @ 0.7 J/cm2

good

Measurements and Processing

Sample 2A
Sample 2B
  • 6/13/2012           FIB-cut TEM sample from clean, uniform-looking area. Bottom (relative to shooting maps) 100 um of spot is now gallium-irradiated.
    AuSi2b_ThinnedTEM.tif
Sample 2D
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