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Sample Fabrication

Substrate

p-Si(111), ρ = 1000 Ω-cm

Implantation conditions

Au, 50 keV, 5e14 /cm2 dose

Pulsed laser melting

Spot

Spot size

Laser used

Shooting conditions

Result

A

2.5x2.5 mm2, masked

Harvard YAG, 355 nm

1 shot @ 0.7 J/cm2

good

B

2.5x2.5 mm2, masked

Harvard YAG, 355 nm

1 shot @ 0.7 J/cm2

good

C

2.5x2.5 mm2, masked

Harvard YAG, 355 nm

1 shot @ 0.7 J/cm2

good

D

2.5x2.5 mm2, masked

Harvard YAG, 355 nm

1 shot @ 0.7 J/cm2

good

Measurements and Processing

Sample 4A
  • 6/4/2012           UV-VIS reflection measurement
    20120604 UV-VIS reflection Au 4a.Sample.Raw.csv 
     
  • 6/5/2012           UV-VIS transmission measurement
    20120605 UV-VIS transmission Au 4a.Sample.Raw.csv 
     
  • 6/11/2012         Laser cut into 7x7 mm sample, solvent clean
    Debris due to laser cut observed
    On 6/13/2012, found out that this laser cutting procedure raises a normal silicon sample temperature high enough to hard-bake the photoresist, so it could have initiated gold diffusion on 4a.
Sample 4B
  • 6/11/2012         Laser cut into 7x7 mm sample, solvent clean
    Debris due to laser cut observed
    On 6/13/2012, found out that this laser cutting procedure raises a normal silicon sample temperature high enough to hard-bake the photoresist, so it could have initiated gold diffusion on 4b.
Sample 4C
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