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This is the home of the MURI Graphene Fabrication space.

1) Decreasing contact resistance:

• Right e-beam dose to minimize residue after development.
  -Development times. Test: AFM before spinning and after development.
• Pumping before evaporation: Heating? How long? Outgassing issues?
• Is UV ozone before evaporation good? Does it damage graphene? What
  parameters (direct UV exposure, dark exposure, time, etc)?
• What metals work best? Under what conditions?

2) Suspending graphene and gates:

• CPD or not?
• Electrode thickness and metals?
• How to prevent rippling (best geometry)?

3) Graphene quality:

• Are different sources of graphite equally good?
• Substrate cleaning recipes
• Deposition strategies
• Current and/or heat annealing? Recipes and parameters.
• CVD versus exfoliated graphene

4) Etching and nanoribbon formation O2 or Ar plasma? PMMA, HSQ, and other masks
Catalytic methods (Ni and other nanoparticles, etc)

5) Dielectrics (substrates, ALD, e-beam deposited, etc)
How to improve SiO2?

• How to get ALD to work reliably (NO2 functionalization? thin oxide seed?)?
• Does high-K really improve mobility?

6) Lift-off issues and after-lift-off cleaning

• Best lift-off recipes, best solvent? (warm/cold acetone, other
  resist strippers?)
• After lift-off cleaning: annealing in forming gas, what temperature,
  how long? What happens to contacts?