This is the home of the MURI Graphene Fabrication space.
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| General Topics and Discussion Ideas |
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Contact resistance: - Right e-beam dose to minimize residue after development.
-Development times. Test: AFM before spinning and after development. - Pumping before evaporation: Heating? How long? Outgassing issues?
- Is UV ozone before evaporation good? Does it damage graphene? What
parameters (direct UV exposure, dark exposure, time, etc)? - What metals work best? Under what conditions?
2) Suspending |
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Quality: - Are different sources of graphite equally good?
- Substrate cleaning recipes
- Deposition strategies
- Current and/or heat annealing? Recipes and parameters.
- CVD versus exfoliated graphene
4) Etching Graphene and |
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graphene Nanoribbon formation O2 or Ar plasma? PMMA, HSQ, and other masks Catalytic methods (Ni and other nanoparticles, etc) 5) Dielectrics (substrates, ALD, e-beam deposited, etc) How to improve SiO2? - How to get ALD to work reliably (NO2 functionalization? thin oxide seed?)?
- Does high-K really improve mobility?
6) Lift-off issues and after-lift-off cleaning - Best lift-off recipes, best solvent? (warm/cold acetone, other
resist strippers?) - After lift-off cleaning: annealing in forming gas, what temperature,
how long? What happens to contacts?
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Participant Directory: Section |
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Jarillo-Herrero Group Michele Zaffalon - michele.zaffalon@gmail.com Britt Baugher - bwhbphd@gmail.com Javier Sanchez-Yamagishi - jdsy@mit.edu Thiti Taychatanapat - taychat@gmail.com Joel I-Jan Wang - joelwang@mit.edu |
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