Sample Fabrication
Substrate # Need update
n-Si(100), ρ = 1-10 Ω-cm
Implantation conditions
Au, 50 keV, 6e15 /cm2 dose
Pulsed laser melting # Need update
Spot | Spot size | Laser used | Shooting conditions | Result |
|---|---|---|---|---|
A | 2.5x2.5 mm2, masked | Harvard YAG, 355 nm | 1 shot @ 0.7 J/cm2 | good |
B | 2.5x2.5 mm2, masked | Harvard YAG, 355 nm | 1 shot @ 0.7 J/cm2 | dirty spot, bad TRR |
C | 2.5x2.5 mm2, masked | Harvard YAG, 355 nm | 1 shot @ 0.7 J/cm2 | good |
D | 2.5x2.5 mm2, masked | Harvard YAG, 355 nm | 1 shot @ 0.7 J/cm2 | good |
E | 2.5x2.5 mm2, masked | Harvard YAG, 355 nm | 1 shot @ 0.7 J/cm2 | good |
Measurements and Processing
Sample 11I
- 9/26/2012 UV-VIS transmission and measurement
20120926 AuSi Sample 6-11 UV-VIS.xlsx - 2/28/2013 1x1mm Device Active Area, 1550nm Laser Diode, Photodiode Responsivity Mapping
