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Sample Master List

Sample ID

Substrate

Implantation conditions

Laser spot

Spot size

PLM conditions

Good/Bad

Characterization

Notes

Current location

Owner

1

n-Si(100), P doped
ρ = 1-10 Ω-cm
(n = 1e15-1e16 /cm3)

Au, 50 keV, 1e14 /cm2

 

 

 

 

 

 

 

 

 

 

 

A

2.5 x 2.5 mm2, masked

Harvard YAG355, 1 shot, 0.7 J/cm2

 

 

 

MIT

Jonathan

 

 

 

B

2.5 x 2.5 mm2, masked

Harvard YAG355, 1 shot, 0.7 J/cm2

 

 

 

MIT

Jonathan

 

 

 

C

2.5 x 2.5 mm2, masked

Harvard YAG355, 1 shot, 0.7 J/cm2

 

 

 

MIT

Jonathan

 

 

 

D

2.5 x 2.5 mm2, masked

Harvard YAG355, 1 shot, 0.7 J/cm2

 

Raman

 

Benet

Jay

 

 

 

E

2.5 x 2.5 mm2, masked

Harvard YAG355, 1 shot, 0.7 J/cm2

 

 

 

Benet

Jay

2

n-Si(100), P doped
ρ = 1-10 Ω-cm
(n = 1e15-1e16 /cm3)

Au, 50 keV, 5e14 /cm2

 

 

 

 

 

 

 

 

 

 

 

A

2.5 x 2.5 mm2, masked

Harvard YAG355, 1 shot, 0.7 J/cm2

Good

 

 

MIT

Jonathan

 

 

 

B

2.5 x 2.5 mm2, masked

Harvard YAG355, 1 shot, 0.7 J/cm2

Bad

SEM, EBSD, TEM

Single Crystal

MIT

Jonathan

 

 

 

C

2.5 x 2.5 mm2, masked

Harvard YAG355, 1 shot, 0.7 J/cm2

Good

 

 

MIT

Jonathan

 

 

 

D

2.5 x 2.5 mm2, masked

Harvard YAG355, 1 shot, 0.7 J/cm2

 

Raman

 

Benet

Jay

 

 

 

E

2.5 x 2.5 mm2, masked

Harvard YAG355, 1 shot, 0.7 J/cm2

 

 

 

Benet

Jay

3

p-Si(111), B doped
ρ = 1000 Ω-cm
(p = 1e13 /cm3)

Au, 50 keV, 1e14 /cm2

 

 

 

 

 

 

 

 

 

 

 

A

2.5 x 2.5 mm2, masked

Harvard YAG355, 1 shot, 0.7 J/cm2

Bad

SEM, EBSD, TEM

Stacking Faults

MIT

Jonathan

 

 

 

B

2.5 x 2.5 mm2, masked

Harvard YAG355, 1 shot, 0.7 J/cm2

Bad

 

 

MIT

Jonathan

 

 

 

C

2.5 x 2.5 mm2, masked

Harvard YAG355, 1 shot, 0.7 J/cm2

Good

 

 

MIT

Jonathan

 

 

 

D

2.5 x 2.5 mm2, masked

Harvard YAG355, 1 shot, 0.7 J/cm2

Good

 

 

MIT

Jonathan

 

 

 

E

2.5 x 2.5 mm2, masked

Harvard YAG355, 1 shot, 0.7 J/cm2

 

Raman

 

Benet

Jay

 

 

 

F

2.5 x 2.5 mm2, masked

Harvard YAG355, 1 shot, 0.7 J/cm2

 

 

 

Benet

Jay

4

p-Si(111), B doped
ρ = 1000 Ω-cm
(p = 1e13 /cm3)

Au, 50 keV, 5e14 /cm2

 

 

 

 

 

 

 

 

 

 

 

A

2.5 x 2.5 mm2, masked

Harvard YAG355, 1 shot, 0.7 J/cm2

 

SEM, EBSD

Stacking Faults

MIT

Jonathan

 

 

 

B

2.5 x 2.5 mm2, masked

Harvard YAG355, 1 shot, 0.7 J/cm2

 

 

 

MIT

Jonathan

 

 

 

C

2.5 x 2.5 mm2, masked

Harvard YAG355, 1 shot, 0.7 J/cm2

 

Raman

 

Benet

Jay

 

 

 

D

2.5 x 2.5 mm2, masked

Harvard YAG355, 1 shot, 0.7 J/cm2

 

 

 

Benet

Jay

5

n-Si(100), P doped
ρ = 1000 Ω-cm

Au, 50 keV, 1e15 /cm2

 

 

 

 

 

 

 

 

 

 

 

A

2.5 x 2.5 mm2, masked

Benet YAG355, 1 shot, 0.65 J/cm2

Non-Uniform

SEM

No sign of Breakdown

Harvard

Austin

 

 

 

B

2.5 x 2.5 mm2, masked

Benet YAG355, 1 shot, 0.65 J/cm2

Non-Uniform

SEM

No sign of Breakdown

Harvard

Austin