Sample Fabrication
Substrate
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p-Si(111) p-Si1e14, 50keV
Shots: 3a, 3b, 3c, 3d
3a, b shots had bad mask alignment; all others okay. All of them 2.5x2.5 mm. Shot with Harvard YAG, 1 shot at 0.7 J/cm2.
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, ρ = 1000 Ω-cm
Implantation conditions
Au, 50 keV, 1e14 /cm2 dose
Pulsed laser melting
Spot | Spot size | Laser used | Shooting conditions | Result |
|---|---|---|---|---|
A | 2.5x2.5 mm2, masked | Harvard YAG, 355 nm | 1 shot @ 0.7 J/cm2 | bad mask alignment |
B | 2.5x2.5 mm2, masked | Harvard YAG, 355 nm | 1 shot @ 0.7 J/cm2 | bad mask alignment |
C | 2.5x2.5 mm2, masked | Harvard YAG, 355 nm | 1 shot @ 0.7 J/cm2 | good |
D | 2.5x2.5 mm2, masked | Harvard YAG, 355 nm | 1 shot @ 0.7 J/cm2 | good |
E | 2.5x2.5 mm2, masked | Harvard YAG, 355 nm | 1 shot @ 0.7 J/cm2 | good |
F | 2.5x2.5 mm2, masked | Harvard YAG, 355 nm | 1 shot @ 0.7 J/cm2 | good |
Measurements and Processing
Sample 3A
- 6/7/2012 SEM/EBSD showing surface evidence of stacking faults, no obvious breakdown.
Spot 3a 90kx.tif
Spot 3a 150kx.tif
Spot 3a 260kx.tif
Spot 3a tilted low mag.tif
Spot 3a tilted FIB crater.tif
- 6/8/2012 FIB-processed for TEM and imaged on JEOL 2100. Stacking faults throughout active layer observed.
Lowmag Focus low.jpg
Active layer showing stacking faults and possible precip.jpg
Active layer faults and planes6.jpg
Active layer faults and planes4.jpg
Active layer faults and planes3.jpg
- 6/13/2012 Spin photoresist and bake at 115 C for 1 minute to protect sample from debris during laser cut
Sample
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3B
- 6/13/2012 Spin photoresist and bake at 115 C for 1 minute to protect sample from debris during laser cut