Sample Fabrication
Substrate
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n-Si(100) n-Si 5e14, 50keV
Shots: 2a, 2b, 2c, 2d, 2e
All 5 were shot using Harvard YAG, 2.5x2.5 mm each. Spot 2a and 2c look good, but 2b was on a dirty spot with bad TRR. Spot 2d and 2e look good.
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, ρ = 1-10 Ω-cm
Implantation conditions
Au, 50 keV, 5e14 /cm2 dose
Pulsed laser melting
Spot | Spot size | Laser used | Shooting conditions | Result |
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A | 2.5x2.5 mm2, masked | Harvard YAG, 355 nm | 1 shot @ 0.7 J/cm2 | good |
B | 2.5x2.5 mm2, masked | Harvard YAG, 355 nm | 1 shot @ 0.7 J/cm2 | dirty spot, bad TRR |
C | 2.5x2.5 mm2, masked | Harvard YAG, 355 nm | 1 shot @ 0.7 J/cm2 | good |
D | 2.5x2.5 mm2, masked | Harvard YAG, 355 nm | 1 shot @ 0.7 J/cm2 | good |
E | 2.5x2.5 mm2, masked | Harvard YAG, 355 nm | 1 shot @ 0.7 J/cm2 | good |
Measurements and Processing
Sample 2A
- 6/4/2012 UV-VIS reflection measurement on crystalline and amorphous spot
20120604 UV-VIS reflection Au 2a.Sample.Raw.csv
20120604 UV-VIS reflection Au 2a amorphous.Sample.Raw.csv
- 6/5/2012 UV-VIS transmission measurement on crystalline and amorphous spot
20120605 UV-VIS transmission Au 2a.Sample.Raw.csv
20120605 UV-VIS transmission Au 2a amorphous.Sample.Raw.csv
Sample
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2B
- 6/13/2012 FIB-cut TEM sample from clean, uniform-looking area. Bottom (relative to shooting maps) 100 um of spot is now gallium-irradiated.
- 6/14/2012 SEM and EBSD. No evidence of breakdown or faulting. EBSD shows good (100) oriented single-crystal throughout.
Spot 2b tilt 2.tif
Spot 2b 90kx.tif
Spot 2b 300kx.tif
Spot 2b failed fib crater.tif