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Procedure:
| HEK control | eBFP 100 | BCR 100 Lyn Lyn 100 Syk 100 U:mKate 100 H:Gal4 100 eBFP 100 | BCR 100 Lyn 100 Syk 100 U:mKate 100
eBFP 100 | ||
BCR-G4 100 h:eBFP 100 h:rtTA 100 H:Lyn 100 T:Syk-TEV 100 U:mKate 100 eBFP 100 10 nM dox aIgM | BCR-G4 25 h:eBFP 100 h:rtTA 100 H:Lyn 100 T:Syk-TEV 100 U:mKate 100 eBFP 100 10 nM dox aIgM | BCR-G4 6.25 h:eBFP 100 h:rtTA 100 H:Lyn 100 T:Syk-TEV 100 U:mKate 100 eBFP 100 10 nM dox aIgM | BCR-G4 100 h:eBFP 100 h:rtTA 100 H:Lyn 100 T:Syk-TEV 100 U:mKate 100 eBFP 100 10 nM dox | BCR-G4 25 h:eBFP 100 h:rtTA 100 H:Lyn 100 T:Syk-TEV 100 U:mKate 100 eBFP 100 10 nM dox | BCR-G4 6.25 h:eBFP 100 h:rtTA 100 H:Lyn 100 T:Syk-TEV 100 U:mKate 100 eBFP 100 10 nM dox |
BCR-G4 100 h:eBFP 100 h:rtTA 100 T:Lyn-TEV 100 U:mKate 100 eBFP 100 Dummy 100 10 nM dox aIgM | BCR-G4 25 h:eBFP 100 h:rtTA 100 T:Lyn-TEV 100 U:mKate 100 eBFP 100 Dummy 100 10 nM dox aIgM | BCR-G4 6.25 h:eBFP 100 h:rtTA 100 T:Lyn-TEV 100 U:mKate 100 eBFP 100 Dummy 100 10 nM dox aIgM | BCR-G4 100 h:eBFP 100 h:rtTA 100 T:Lyn-TEV 100 U:mKate 100 eBFP 100 Dummy 100 10 nM dox | BCR-G4 25 h:eBFP 100 h:rtTA 100 T:Lyn-TEV 100 U:mKate 100 eBFP 100 Dummy 100 10 nM dox | BCR-G4 6.25 h:eBFP 100 h:rtTA 100 T:Lyn-TEV 100 U:mKate 100 eBFP 100 Dummy 100 10 nM dox |
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Results:
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